Author/Authors :
Martin، نويسنده , , R.D. and Amman، نويسنده , , M. and Chan، نويسنده , , Y.D. and Detwiler، نويسنده , , J.A. and Loach، نويسنده , , J.C. and Looker، نويسنده , , Q. and Luke، نويسنده , , P.N. and Poon، نويسنده , , A.W.P. and Qian، نويسنده , , Martin J. and Vetter، نويسنده , , K. and Yaver، نويسنده , , H.، نويسنده ,
Abstract :
An algorithm to determine the drift time of charge carriers in p-type point contact (PPC) high-purity germanium (HPGe) detectors from the signals processed with a charge-sensitive preamplifier is introduced. It is demonstrated that the drift times can be used to estimate the distance of charge depositions from the point contact and to characterize losses due to charge trapping. A correction for charge trapping effects over a wide range of energies is implemented using the measured drift times and is shown to improve the energy resolution by up to 30%.
