New Dual-Dielectric Gate All Around (DDGAA) RADFET dosimeter design to improve the radiation sensitivity

In this paper, a new radiation sensitive FET (RADFET) dosimeter design (called the Dual-Dielectric Gate All Around DDGAA RADFET dosimeter) to improve the radiation sensitivity performance and its analytical analysis has been proposed, investigated and expected to improve the sensitivity behavior and fabrication process for RADFET dosimeter-based applications. Analytical models have been developed to predict and compare the performance of the proposed design and conventional (bulk) RADFET, where the comparison of device architectures shows that the proposed design exhibits a superior performance with respect to the conventional RADFET in term of fabrication process and sensitivity performances. The proposed design has linear radiation sensitivities of approximately 95.45 μV/Gy for wide irradiation dose range (from Dose=50 Gy to Dose=3000 Gy). Our results showed that the analytical analysis is in close agreement with the 2-D numerical simulation over a wide range of device parameters. As a result, we demonstrate that DDGAA RADFET dosimeter can be a viable option to enhance the performance of CMOS-based dosimeter technology for nuclear industry, space, radiotherapy and environment monitoring applications.