Author/Authors :
Parker، نويسنده , , Sherwood and Mokhov، نويسنده , , N.V. and Rakhno، نويسنده , , I.L. and Tropin، نويسنده , , I.S. and DaVia، نويسنده , , Cinzia and Seidel، نويسنده , , S. and Hoeferkamp، نويسنده , , M. E. METCALFE، نويسنده , , J. and Wang، نويسنده , , Rui and Kenney، نويسنده , , Christopher and Hasi، نويسنده , , Jasmine and Grenier، نويسنده , , Philippe، نويسنده ,
Abstract :
Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additional steps and may be necessary to prevent a new form of radiation-damage failure in non-uniform radiation fields.
Keywords :
3D silicon detectors , Radiation hardness , Active edges , Forward proton tagging , Non-uniform irradiation , Triple-wall electrodes
