Title of article
A pulsed nanosecond IR laser diode system to automatically test the Single Event Effects in the laboratory
Author/Authors
Alpat، نويسنده , , B. and Battiston، نويسنده , , R. and Bizzarri، نويسنده , , M. and Blasko، نويسنده , , S. and Caraffini، نويسنده , , D. and Dimasso، نويسنده , , L. and Esposito، نويسنده , , G. and Farnesini، نويسنده , , L. and Ionica، نويسنده , , M. and Menichelli، نويسنده , , M. and Papi، نويسنده , , A. and Pontetti، نويسنده , , G. and Postolache، نويسنده , , V.، نويسنده ,
Pages
5
From page
183
To page
187
Abstract
A pulsed nanosecond IR laser diode system to automatically test the Single Event Effects in laboratory is described. The results of Single Event Latchup (SEL) test on two VLSI chips (VA_HDR64, 0.8 and 1.2 μm technology) are discussed and compared to those obtained with high-energy heavy ions at GSI (Darmstadt).
Keywords
Laser , SEE , Latch-up , Single event effect
Journal title
Astroparticle Physics
Record number
2019576
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