Author/Authors :
Simi، نويسنده , , G. D. Angelini
، نويسنده , , C. and Batignani، نويسنده , , G. and Bettarini، نويسنده , , S. and Bondioli، نويسنده , , M. and Boscardin، نويسنده , , M. and Bosisio، نويسنده , , L. and Dalla Betta، نويسنده , , G.-F. and Dittongo، نويسنده , , S. and Forti، نويسنده , , F. and Giorgi، نويسنده , , M. and Gregori، نويسنده , , P. and Manghisoni، نويسنده , , Boris M. and Morganti، نويسنده , , M. and U. Pignatel، نويسنده , , G. a، نويسنده ,
Abstract :
We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures.
Keywords :
Field-effect devices , Silicon micro-strip detectors , Bipolar transistors , Electrical characterization , Fabrication technology
