Author/Authors :
Braibant، نويسنده , , Peter S. and Demaria، نويسنده , , N. and Feld، نويسنده , , Michael L. and Frey، نويسنده , , A. and Fürtjes، نويسنده , , A. and Glessing، نويسنده , , W. and Hammarstrِm، نويسنده , , R. and Honma، نويسنده , , A. and Mannelli، نويسنده , , M. and Mariotti، نويسنده , , C. and Mنttig، نويسنده , , P. and Migliore، نويسنده , , E. and Piperov، نويسنده , , S. and Runolfsson، نويسنده , , Joerg O. and Schmitt، نويسنده , , B. and Sِldner-Remb، نويسنده ,
Abstract :
In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurements have been made for strip pitches between 60 and 240 μm and various strip implants and metal widths, using multi-geometry devices, fabricated on wafers of either 〈1 1 1〉 or 〈1 0 0〉 crystal orientation, of resistivities between 1 and 6 kΩ cm and of thicknesses between 300 and 410 μm. The effect of irradiation on properties of devices has been studied with 24 GeV/c protons up to a fluence of 4.3×1014 cm−2.
Keywords :
Silicon microstrip detectors , Strip detector capacitance , Radiation hardness , Tracking at the LHC , CMS
