Title of article :
Photomask specifications for high energy physics detectors
Author/Authors :
Pindo، نويسنده , , Massimiliano، نويسنده ,
Pages :
9
From page :
362
To page :
370
Abstract :
Planar technologies used for radiation detector fabrication imply an extensive use of photomasks whose characteristics are critical in determining final detector performance. Compatibly with their manufacturing process, photomasks must satisfy the application-specific requirements dictated both by wafer manufacturers and detector final users. The design and realization of microstrip and pixel detectors, widely used in high energy physics experiments, ask for intensive scientific effort, advanced technology and important economical investments. Photomask specification definition is one of the fundamental steps to optimize detector fabrication processes and fulfill experimental requirements at the most appropriate cost.
Keywords :
Critical dimension , Lithography , microstrip , Leakage Current , capacitance , Particle Contamination , DEFECT , pixel , Photomask
Journal title :
Astroparticle Physics
Record number :
2019610
Link To Document :
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