• Title of article

    Theoretical calculations of the primary defects induced by pions and protons in SiC

  • Author/Authors

    Lazanu، نويسنده , , S. and Lazanu، نويسنده , , I. and Borchi، نويسنده , , E. and Bruzzi، نويسنده , , M.، نويسنده ,

  • Pages
    6
  • From page
    768
  • To page
    773
  • Abstract
    In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
  • Keywords
    diamond , Silicon , GaAS , hadrons , Radiation damage properties , SiC
  • Journal title
    Astroparticle Physics
  • Record number

    2019681

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2019681