Author/Authors :
Qu، نويسنده , , Xiangdong and Zhang، نويسنده , , Liyuan and Zhu، نويسنده , , Ren-Yuan and Deng، نويسنده , , Qun and Liao، نويسنده , , Jingying and Yin، نويسنده , , Zhiwen، نويسنده ,
Abstract :
In this paper, we present results of a study on Sb doping in lead tungstate crystals. The crystal growth by modified Bridgman method is described. The segregation coefficient of Sb ions in lead tungstate crystals was determined. The scintillation emission and longitudinal transmittance spectra, light output, decay kinetics and radiation damage were measured. It is found that Sb doping alone is not sufficient to produce radiation hard lead tungstate crystals, and post-growth oxygen compensation is required.
Keywords :
Lead tungstate , Doping , Radiation hardness , Modified Bridgman method , Crystal growth
