• Title of article

    Technology development of 3D detectors for high-energy physics and imaging

  • Author/Authors

    Pellegrini، نويسنده , , Giulio and Roy، نويسنده , , P and Bates، نويسنده , , R and Jones، نويسنده , , D and Mathieson، نويسنده , , K and Melone، نويسنده , , J and O’Shea، نويسنده , , V and Smith، نويسنده , , K.M and Thayne، نويسنده , , I and Thornton، نويسنده , , P and Linnros، نويسنده , , J and Rodden، نويسنده , , W and Rahman، نويسنده , , M، نويسنده ,

  • Pages
    8
  • From page
    19
  • To page
    26
  • Abstract
    Various fabrications routes to create ‘3D’ detectors have been investigated and the electrical characteristics of these structures have been compared to simulations. The geometry of the detectors is hexagonal with a central anode surrounded by six cathode contacts. A uniform electric field is obtained with the maximum drift and depletion distance set by electrode spacings rather than detector thickness. This should improve the ability of silicon to operate in the presence of the severe bulk radiation damage expected in high-energy colliders. Moreover, 3D detectors made with other materials (e.g. GaAs, SiC) may be used, for example, in X-ray detection for medical imaging. Holes in the substrate were made either by etching with an inductively coupled plasma machine, by laser drilling or by photochemical etching. A number of different hole diameters and thickness have been investigated. Experimental characteristics have been compared to MEDICI simulations.
  • Keywords
    Semiconductor , MEDICAL IMAGING , Radiation hardness , 3D detectors
  • Journal title
    Astroparticle Physics
  • Record number

    2019979