Author/Authors :
Hu، نويسنده , , X.B. and Hu، نويسنده , , C.Z. and Yin، نويسنده , , D.P and Zhang، نويسنده , , L.Y. and Zhang، نويسنده , , C.N. and Chen، نويسنده , , Y. and Zhang، نويسنده , , G.Q. and Yang، نويسنده , , R. and Liang، نويسنده , , K. and Musienko، نويسنده , , Yu. and Han، نويسنده , , D.J.، نويسنده ,
Abstract :
The SiPMs with quenching resistors integrated into bulk epitaxial silicon have been investigated at the Novel Device Laboratory (NDL), Beijing Normal University, China. The aim is to alleviate the conflict between the high photon detection efficiency (PDE) and high APD cell density or dynamic range encountered by conventional SiPM so that this promising detector can be applied where both large dynamic range and high PDE are required simultaneously. We report herein the latest progresses on the SiPM with 104/mm2 micro-cell density and 0.5 mm×0.5 mm, 1 mm×1 mm as well as 20 μm×1.8 mm effective area, which have been designed and fabricated at NDL. Application of the strip SiPM with a gated photon counting technique on the measurement of TNT Raman spectroscopy is demonstrated, and the feasibility for extending SiPMs in conjunction with Nuclear Instrumentation Modules (NIM) based electronics to the field of ultra-weak spectroscopy is verified.
Keywords :
Raman spectroscopy , SiPM , Silicon photomultipliers , MPPC , Bulk quenching resistor
