Active pixel detector for ion beam profiling

The use of ion implanters has been vital to the downward scaling of device dimensions in silicon technology. To achieve good process control, the ion beam characteristics within the implanter must be well known. Hybrid pixel technology is advanced as a possible solution to the problem of real-time ion beam profiling and dosimetry. The proof-of-principle prototype detector is described. The read-out electronics comprises a charge integrating chip designed in Europractice. The detector has been tested in an argon ion beam. The results show real-time beam profile acquisition and current measurement. The effects of secondary electron emission are qualitatively observed for different beam energies and must be addressed for accurate beam profiling.