Title of article
Progress in the realization of a silicon-CNT photodetector
Author/Authors
Aramo، نويسنده , , C. and Ambrosio، نويسنده , , A. and Ambrosio، نويسنده , , M. and Castrucci، نويسنده , , P. and Cilmo، نويسنده , , M. and De Crescenzi، نويسنده , , M. and Fiandrini، نويسنده , , E. and Guarino، نويسنده , , F. and Grossi، نويسنده , , V. and Nappi، نويسنده , , E. and Passacantando، نويسنده , , M. and Pignatel، نويسنده , , G. and Santucci، نويسنده , , S. and Scarselli، نويسنده , , M. and Tinti، نويسنده , , A. and Val، نويسنده ,
Pages
4
From page
150
To page
153
Abstract
The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm.
Keywords
Schottky junction , photodetector , Carbon nanotubes
Journal title
Astroparticle Physics
Record number
2020077
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