Title of article
Single photoelectron timing resolution of SiPM as a function of the bias voltage, the wavelength and the temperature
Author/Authors
Puill، نويسنده , , V. and Bazin، نويسنده , , C. and Breton، نويسنده , , D. and Burmistrov، نويسنده , , L. and Chaumat، نويسنده , , V. and Dinu، نويسنده , , N. and Maalmi، نويسنده , , J. and Vagnucci، نويسنده , , J.F. and Stocchi، نويسنده , , A.، نويسنده ,
Pages
5
From page
354
To page
358
Abstract
This work reports on Silicon Photomultipliers (SiPM) timing resolution measurements performed at the picosecond level at Laboratory of Linear Accelerator (LAL), In2p3- CNRS.
pendence of Single Photoelectron Timing Resolution (SPTR) with the applied voltage, wavelength of the light and the temperature was measured for detectors from Hamamatsu Photonics, AdvanSiD and Sensl with an active area of 1 and 9 mm2.
TR improves with the bias voltage increase. No significant variation of SPTR was observed with the temperature change. We also observed a weak variation of it as a function of the wavelength of the light. The best SPTR measured was about 120 ps (FWHM).
Keywords
Single photoelectron timing resolution (SPTR) , Picoseconds level , Time-of-flight (TOF) , Silicon photomultipliers (SiPM)
Journal title
Astroparticle Physics
Record number
2020171
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