A radiation damage test for double-sided silicon strip detectors

In order to investigate the p-side strip isolation, position sensitivity and charge collection of type-inverted double-sided silicon microstrip detectors, signal amplitude and charge sharing of adjacent strips were measured by using a laser test stand, following the irradiation with a flux of 3.8×1013 /cm2 of 12 GeV protons. The irradiated detectors indicated high bulk resistivity, which results in maintaining a position sensitivity of the ohmic contact side even below the full depletion voltage. This fact suggests a possibility of operation of a double-sided detector whose full depletion voltage becomes higher than its breakdown limit because of a radiation damage.