Title of article
Influence of bias voltage on the stability of CsI photocathodes exposed to air
Author/Authors
Nitti، نويسنده , , M.A. and Cioffi، نويسنده , , N. and Nappi، نويسنده , , E. and Singh، نويسنده , , B.K. and Valentini، نويسنده , , A.، نويسنده ,
Pages
9
From page
16
To page
24
Abstract
We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190–850 nm.
Keywords
Bias voltage , CsI photocathodes , Humid air exposure effect on QE , XRD , XPS , Optical analysis , ageing , Photon detectors
Journal title
Astroparticle Physics
Record number
2020648
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