Author/Authors :
Inbal Ayzenshtat، نويسنده , , A.I. and Budnitsky، نويسنده , , D.L and Koretskaya، نويسنده , , O.B and Okaevich، نويسنده , , L.S. and Novikov، نويسنده , , V.A. and Potapov، نويسنده , , A.I and Tolbanov، نويسنده , , O.P. and Tyazhev، نويسنده , , A.V and Vorobiev، نويسنده , , A.P.، نويسنده ,
Abstract :
Among the possible semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to its high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors on the base of SI-GaAs are presented.
Keywords :
Charge collection efficiency , Microstrip detectors , Radiation hardness , SI-GaAs
