Title of article
GaAs as a material for particle detectors
Author/Authors
Inbal Ayzenshtat، نويسنده , , A.I. and Budnitsky، نويسنده , , D.L and Koretskaya، نويسنده , , O.B and Okaevich، نويسنده , , L.S. and Novikov، نويسنده , , V.A. and Potapov، نويسنده , , A.I and Tolbanov، نويسنده , , O.P. and Tyazhev، نويسنده , , A.V and Vorobiev، نويسنده , , A.P.، نويسنده ,
Pages
8
From page
120
To page
127
Abstract
Among the possible semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to its high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors on the base of SI-GaAs are presented.
Keywords
Charge collection efficiency , Microstrip detectors , Radiation hardness , SI-GaAs
Journal title
Astroparticle Physics
Record number
2020704
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