Title of article
Performances of epitaxial GaAs detectors
Author/Authors
Bréelle، نويسنده , , G.C and Samic، نويسنده , , H and Sun، نويسنده , , G.C and Bourgoin، نويسنده , , J.C، نويسنده ,
Pages
4
From page
26
To page
29
Abstract
The aim of the study is to show that the thick epitaxial layers we grow using the Chemical Reaction method, a method which overcomes the difficulties in producing thick epitaxial layers, can provide detectors which have the same high performances, established since the 1970s and recently confirmed, as the ones made by conventional epitaxial methods. For this, we performed counting detection of high-energy protons, electrons, gamma and alpha particles with detectors made with such layers. The results obtained in each case are discussed in terms of energy resolution and charge collection efficiency.
Keywords
epitaxy , GaAS , p–i–n structure , detector
Journal title
Astroparticle Physics
Record number
2021007
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