Title of article
A comparison of the X-ray performance of TlBr crystals grown by the Bridgeman–Stockbarger and travelling molten zone methods
Author/Authors
Gostilo، نويسنده , , V and Owens، نويسنده , , A and Bavdaz، نويسنده , , M and Lisjutin، نويسنده , , I and Peacock، نويسنده , , A and Sipila، نويسنده , , H and Zatoloka، نويسنده , , S، نويسنده ,
Pages
5
From page
47
To page
51
Abstract
We have investigated at optimal temperature the X-ray detection characteristics of two TlBr crystals by the Traveling Molten Zone (TMZ) technique. The resistivities were typically 1.5×1010 Ω cm at room temperature, increasing to (1.1–1.7)×1012 Ω cm at −15°C. In the temperature range −0°C to −50°C, both crystals exhibited mobility-lifetime products of ∼8×10−5 cm2V−1 and ∼1.5×10−5 cm2V−1, for electrons and holes respectively. From these crystals, two detectors were packaged and X-ray metrology carried out. For the best detector, the measured energy resolutions at an operating temperature of −15°C and 500 V bias were 1.0 keV at 5.9 keV; 1.1 at 13.9 keV; 2.5 at 59.54 keV; 3.3 keV at 88 keV; 4 keV at 122 keV and 27.7 keV at 662 keV.A comparative analysis of the characteristics of detectors grown by TMZ to those grown by the Bridgeman–Stockbarger method is given.
Keywords
TlBr , X-rays , Compound semiconductors
Journal title
Astroparticle Physics
Record number
2021014
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