Title of article
Charge collection in X-ray pixel detectors based on SI-GaAs doped with Cr
Author/Authors
Inbal Ayzenshtat، نويسنده , , G.I and Bimatov، نويسنده , , M.V and Tolbanov، نويسنده , , O.P. and Vorobiev، نويسنده , , A.P.، نويسنده ,
Pages
4
From page
52
To page
55
Abstract
An analysis of the performance of X-ray pixel detectors based on SI-GaAs doped with Cr has been carried out. An analytic form for electron and hole currents of a pixel has been obtained. The detector based on our material has high charge-collection efficiency only when the pixel contacts are anodes in contrast to LEC SI-GaAs. The mean charge collected on pixel contact is calculated for radiation energies of 30 and 60 keV (charge is averaged over all monoenergetic photons irradiating the detector cell).
Keywords
Radiation detectors , Pixel detectors , Charge collection
Journal title
Astroparticle Physics
Record number
2021015
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