Title of article
Characterization of CdTe crystals grown by the Vertical Bridgman method
Author/Authors
Fiederle، نويسنده , , M. and Fauler، نويسنده , , A. and Babentsov، نويسنده , , V. and Franc، نويسنده , , J. and Konrath، نويسنده , , J. and Webel، نويسنده , , M. and Ludwig، نويسنده , , Edwin J. and Benz، نويسنده , , K.W.، نويسنده ,
Pages
6
From page
70
To page
75
Abstract
CdTe crystals have been grown by the Vertical Bridgman method with diameters of 25, 45 and 75 mm. Improvements of the crystallinity could be achieved by reduction of twins and growth of large single crystalline grains up to 40×40 mm2. CdTe:Ge has been grown with resistivities up to 2×1010 Ω cm . The samples showed a mobility-lifetime product of 5.7×10−5 for holes.
Keywords
Crystal growth , CdTe , radiation detector , Ge doping
Journal title
Astroparticle Physics
Record number
2021023
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