Title of article :
The charge collection in single side silicon microstrip detectors
Author/Authors :
Eremin، نويسنده , , V and Bohm، نويسنده , , J and Roe، نويسنده , , S and Ruggiero، نويسنده , , G and Weilhammer، نويسنده , , P، نويسنده ,
Pages :
12
From page :
121
To page :
132
Abstract :
The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness—with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramoʹs theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.
Keywords :
Charge collection , Silicon , Microstrip detectors , Signal formation
Journal title :
Astroparticle Physics
Record number :
2021024
Link To Document :
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