Author/Authors :
Inbal Ayzenshtat، نويسنده , , G.I. and Babichev، نويسنده , , E.A. and Baru، نويسنده , , S.E. and Groshev، نويسنده , , V.R. and Savinov، نويسنده , , G.A. and Tolbanov، نويسنده , , O.P. and Vorobiev، نويسنده , , A.P.، نويسنده ,
Abstract :
X-ray detectors for use with a scanning radiographic device have been developed based on the technique of compensated semi-insulating GaAs. The main detector feature is a linear current–voltage characteristic due to the use of Ohmic contacts. The detector consists of two identical detectors connected to power supplies with different polarities in order to minimize the detector leakage current.
g of the detectors has been carried out at the Budker Institute of Nuclear Physics. The detector was used with the digital X-ray apparatus “LDRD SIBERIA–N”. The detector parameters have been studied, looking at the dependence with radiation dose, with the applied bias voltage and with the gamma photon energy, using photons in the range of 60–120 keV. Images of a test-object were obtained with a resolution of 1.4 line pairs per mm for a detector with 400 μm pitch and 2.8 line pairs per mm for a detector with 200 μm pitch.