Title of article :
Measurement of the single event upset cross-section in the SVX IIe chip
Author/Authors :
Juste، نويسنده , , A. and Tripathi، نويسنده , , S.M. and Wijngaarden، نويسنده , , D.A.، نويسنده ,
Abstract :
The Single Event Effect cross-section for the SVX IIe readout chip has been measured using 63.3 MeV protons from the UC Davis cyclotron. The expected rate of Single Event Upsets in the Dط Silicon Microstrip Tracker, which uses the SVX IIe chip, is low enough for stable running. No Single Event Latchups were recorded. The chips withstood radiation doses of over 3 Mrad (3×104 Gy), well over the dose expected for the anticipated exposure of the detector.
Keywords :
Single event upset , Radiation tolerance , Silicon detector
Journal title :
Astroparticle Physics