Title of article
High resistivity silicon active pixel sensors for recording data from STEM
Author/Authors
Chen، نويسنده , , W. and De Geronimo، نويسنده , , G. and Li، نويسنده , , Z. and OʹConnor، نويسنده , , P. and Radeka، نويسنده , , V. and Rehak، نويسنده , , P. and Smith، نويسنده , , G.C. and Wall، نويسنده , , J.S. and Yu، نويسنده , , B.، نويسنده ,
Pages
10
From page
368
To page
377
Abstract
An X-ray Active Matrix Pixel Sensor (XAMPS) for recording Data from the Scanning Transmission Electron Microscope (STEM) was designed, produced and tested. The reason for measuring scattering angle of all STEM electrons is given together with the requirement on the performance of the XAMPS. Principles of the measurement of the number of STEM electrons scattered in a particular direction are summarized. Results of tests performed on a produced detector are described and the problem with the formation of an insulation layer between silicon and aluminum is identified. A change in the design of the pixel is proposed which results in a fully functioning XAMPS even with the insulation layer present.
Keywords
Pixel sensor , Electron microscope , Silicon detector , direct conversion
Journal title
Astroparticle Physics
Record number
2021343
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