Title of article :
Radiation tolerance of oxygenated n-strip read-out detectors
Author/Authors :
Allport، نويسنده , , P.P. and Casse، نويسنده , , G. and Greenall، نويسنده , , A.، نويسنده ,
Pages :
5
From page :
84
To page :
88
Abstract :
Following earlier work on ‘oxygenated’ detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomogeneously irradiated up to doses of 7×1014 p/cm2 using 24 GeV protons from the CERN PS. Results are presented on the charge collection efficiencies as a function of operating voltage for regions of the detectors irradiated to different doses, using LHC speed analogue read-out electronics. The measurements confirm the expectations which led to our original proposal of such detectors which are now being envisaged for the silicon-based detector systems at the LHC designed to withstand the greatest doses. The possibilities for survival at an upgraded luminosity LHC (Super-LHC) are also briefly discussed.
Keywords :
Radiation hardness , Silicon microstrips
Journal title :
Astroparticle Physics
Record number :
2021505
Link To Document :
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