• Title of article

    Radiation tolerance of oxygenated n-strip read-out detectors

  • Author/Authors

    Allport، نويسنده , , P.P. and Casse، نويسنده , , G. and Greenall، نويسنده , , A.، نويسنده ,

  • Pages
    5
  • From page
    84
  • To page
    88
  • Abstract
    Following earlier work on ‘oxygenated’ detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomogeneously irradiated up to doses of 7×1014 p/cm2 using 24 GeV protons from the CERN PS. Results are presented on the charge collection efficiencies as a function of operating voltage for regions of the detectors irradiated to different doses, using LHC speed analogue read-out electronics. The measurements confirm the expectations which led to our original proposal of such detectors which are now being envisaged for the silicon-based detector systems at the LHC designed to withstand the greatest doses. The possibilities for survival at an upgraded luminosity LHC (Super-LHC) are also briefly discussed.
  • Keywords
    Radiation hardness , Silicon microstrips
  • Journal title
    Astroparticle Physics
  • Record number

    2021505