Photo-detecting characteristics of double barrier structures

Spectral dependence of photocurrent is calculated for the structure with narrow basis (with thickness equal to ∼1 μk) located between two counter barriers, in view of the reflecting characteristics of junctions. In the spectral characteristics, change of the photocurrent sign is obtained. It is also shown that spectral sensitivity and inversion point location depend both on reflecting characteristics of rear junction and on external bias voltage. Physical explanations of indicated photoelectric processes are also given.