Author/Authors :
Pasternak، نويسنده , , R. and Shirokaya، نويسنده , , Y.V. and Marka، نويسنده , , Reem Z. and Miller، نويسنده , , J.K. and Rashkeev، نويسنده , , S.N. and Pantelides، نويسنده , , S.T. and Tolk، نويسنده , , N.H. and Choi، نويسنده , , B.K. and Schrimpf، نويسنده , , R.D. and Fleetwood، نويسنده , , D.M.، نويسنده ,
Abstract :
Electron transport in a variable-thickness ultra-thin SiO2-on-Si structure (1.0–6.5 nm) is observed to be enhanced substantially by X-ray radiation-induced damage as detected by a novel fast-pulsed laser technique. This method involves optically stimulated electron injection into the oxide followed by detection of transport, trapping and recombination rates using time-dependent electric-field induced second-harmonic generation (EFISH) arising from charge separation at the interface. This detection technique provides a contactless, noninvasive alternative to electrical characterization.
Keywords :
Thin gate oxides , Silicon , 2-nd harmonic generation , Induced leakage current
