Author/Authors :
Kramberger، نويسنده , , G. and Contarato، نويسنده , , D. and Fretwurst، نويسنده , , E. and Hِnniger، نويسنده , , F. and Lindstrِm، نويسنده , , G. and Pintilie، نويسنده , , I. and Rِder، نويسنده , , Jonathan R. and Schramm، نويسنده , , A. and Stahl، نويسنده , , J.، نويسنده ,
Abstract :
For the LHC upgrade (fluences up to 1016 p/cm2) epi-Si devices are shown to be a viable solution. No type inversion was measured up to 1.3×1015 24 GeV/c protons/cm2 and the charge collection efficiency (CCE) remained close to 100%. For reactor neutrons CCE was measured to be 60% at 8×1015 n/cm2. Annealing measurements have shown that only moderate cooling during beam off periods would be necessary. As a tentative explanation for the superior quality of these devices, we assume that radiation-induced donor generation leads to compensation effects of deep acceptors. In the future, we will extend the experiments to fluences up to 1016 p/cm2 and use also different variants of the epi-Si material and device geometry.
