Author/Authors :
Kramberger، نويسنده , , G and Cindro، نويسنده , , V and Mandi?، نويسنده , , I and Miku?، نويسنده , , M and Zavrtanik، نويسنده , , M، نويسنده ,
Abstract :
An attempt to determine the effective dominant electron and hole traps in standard, neutron-irradiated FZ silicon was made. The method was based on measurements of effective dopant concentration and effective carrier trapping times in the presence of an enhanced carrier concentration. Measurements can be well described with a deep donor level in the bottom part of the band gap and a deep acceptor level in the upper part of the band gap.
Keywords :
Effective space charge , Effective carrier trapping time , Silicon detectors , Continuous carrier injection
