Title of article
Determination of the effective dominant electron and hole trap in neutron-irradiated silicon detectors
Author/Authors
Kramberger، نويسنده , , G and Cindro، نويسنده , , V and Mandi?، نويسنده , , I and Miku?، نويسنده , , M and Zavrtanik، نويسنده , , M، نويسنده ,
Pages
7
From page
109
To page
115
Abstract
An attempt to determine the effective dominant electron and hole traps in standard, neutron-irradiated FZ silicon was made. The method was based on measurements of effective dopant concentration and effective carrier trapping times in the presence of an enhanced carrier concentration. Measurements can be well described with a deep donor level in the bottom part of the band gap and a deep acceptor level in the upper part of the band gap.
Keywords
Effective space charge , Effective carrier trapping time , Silicon detectors , Continuous carrier injection
Journal title
Astroparticle Physics
Record number
2022093
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