Characterisation of single-crystal mercuric iodide

The mobility-lifetime product of electrons and holes in single-crystal mercuric iodide for detector applications was measured to be 4×10−5 and 3×10−5 cm2/V respectively. The charge carriers were optically induced by a near band gap excitation using a GaP (560 nm) light emitting diode. Optical Deep Level Transient Spectrometry measurements of trapping states showed three dominant energy levels at 0.26, 0.8 and 1.4 eV. There is little correlation between trapping levels reported in the literature.