Can silicon operate beyond 1015 neutrons cm−2?

Factors that control the charge collection efficiency (CCE) in irradiated silicon detectors are discussed. The CCE and especially the related parameter, signal efficiency, are shown to be the limiting factors for operation after high levels of irradiation. Solutions to improving the radiation tolerance of silicon detectors are discussed, such as operational condition, defect engineering and device engineering. Conclusions are drawn as to future research directions.