Title of article
Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
Author/Authors
Cindro، نويسنده , , V. and Mandi?، نويسنده , , I. and Kramberger، نويسنده , , G. and Miku?، نويسنده , , M. and Zavrtanik، نويسنده , , M.، نويسنده ,
Pages
3
From page
343
To page
345
Abstract
Holes were continuously injected into irradiated diodes by light illumination of the n+-side. The charge of holes trapped in the radiation-induced levels modified the effective space charge. Charge collection efficiency was measured with a 90Sr source at different bias voltages, temperatures and hole currents. CCE was found to be limited by the trapping of signal charge.
Keywords
Silicon detectors , Charge collection efficiency , Radiation hardness
Journal title
Astroparticle Physics
Record number
2022415
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