Title of article
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
Author/Authors
Hنrkِnen، نويسنده , , Samuel J. and Tuovinen، نويسنده , , E. and Luukka، نويسنده , , P. and Tuominen، نويسنده , , E. and Lassila-Perini، نويسنده , , K. and Mehtنlن، نويسنده , , P. and Nummela، نويسنده , , S. and Nysten، نويسنده , , J. and Zibellini، نويسنده , , A. and Li، نويسنده , , Z. and Fretwurst، نويسنده , , E. and Lindstroem، نويسنده , , Evgenia G. and Stahl، نويسنده , , J. and Hِnniger، نويسنده , , F. and Eremin، نويسنده , , V. and Ivanov، نويسنده , , Andrey A. and Verbitskaya، نويسنده , , E. and Heikkilن، نويسنده , , P. and Ovchinnikov، نويسنده , , V. and Yli-Koski، نويسنده , , M. and Laitinen، نويسنده , , P. and Pirojenko، نويسنده , , A. and Riihimنki، نويسنده , , I. and Virtanen، نويسنده , , A.، نويسنده ,
Pages
3
From page
346
To page
348
Abstract
We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
Keywords
CZ-Si , detector , Radiation hardness
Journal title
Astroparticle Physics
Record number
2022416
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