Measurement of trapping time constants in irradiated DOFZ silicon with test beam data

A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS Pixel detectors irradiated with protons to a fluence of 1.1×1015 neq cm−2. Different defect annealing scenarios have been investigated. The trapping probability has been observed to be smaller after 25 h of annealing at 60°C than after beneficial annealing only.