Author/Authors :
Anelli، نويسنده , , G. and Commichau، نويسنده , , S.C. and Despeisse، نويسنده , , M. and Dissertori، نويسنده , , G. and Jarron، نويسنده , , P. and Miazza، نويسنده , , C. and Moraes، نويسنده , , D. and Shah، نويسنده , , A. and Viertel، نويسنده , , G.M. and Wyrsch، نويسنده , , N.، نويسنده ,
Abstract :
A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC). For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n–i–p a-Si:H diode array deposited on a glass substrate and on the a-Si:H above ASIC prototype detector.
