Author/Authors :
Mandi?، نويسنده , , I. and Cindro، نويسنده , , V. and Kramberger، نويسنده , , G. and Kri?tof، نويسنده , , E. and Miku?، نويسنده , , M. and Vrta?nik، نويسنده , , D.، نويسنده ,
Abstract :
Radiation damage caused by neutrons in DMILL npn bipolar transistors was measured. Transistors were exposed to neutrons with different fast-to-thermal flux ratios in the reactor in Ljubljana to fluences up to 5×1014 n/cm2. Degradation of transistor common emitter current gain was measured as the function of fluence. Large degradation caused by thermal neutrons (E<0.5 eV) was observed.
