Title of article
Study of radiation damage induced by 82 MeV protons on multi-pixel Geiger-mode avalanche photodiodes
Author/Authors
Musienko، نويسنده , , Y. and Renker، نويسنده , , D. and Charifoulline، نويسنده , , Z. and Deiters، نويسنده , , Siddhartha K. and Reucroft، نويسنده , , S. K. Swain، نويسنده , , J.، نويسنده ,
Pages
6
From page
87
To page
92
Abstract
Results from a study on the radiation hardness of multi-pixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from five manufacturers (Hamamatsu (Japan), CPTA/Photonique (Russia/Switzerland), Zecotek (Singapore), Pulsar (Russia) and FBK-IRST (Italy)) were exposed to 82 MeV protons at fluences up to 1010 protons/cm2 at the Paul Scherrer Institute. The G-APDʹs main parameters were measured before and after irradiation. The effects of the proton radiation on breakdown voltage, quenching resistance value, gain, photon detection efficiency, dark current and dark count rate for these devices are shown and discussed.
Keywords
SiPM , Geiger-mode avalanche photodiodes , Silicon radiation detectors
Journal title
Astroparticle Physics
Record number
2023005
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