Precision measurements of Photon Detection Efficiency for SiPM detectors

We present the preliminary results of the characterization of silicon detectors in terms of Photon Detection Efficiency (PDE). The precision measurements are performed at controlled temperature, using a specially suited setup based on a monochromator, an integrating sphere to randomize the incident light and a calibrated reference photodiode. We exploit a measurement technique that we recently devised, based on single photon counting with subtraction of dark noise, and avoiding as much as possible cross-talk and afterpulses. We describe in detail the experimental setups and the techniques utilized to measure the PDE. The achieved results are here discussed in order to establish a methodology capable to give very precise PDE values for solid-state photomultiplier detectors.