Author/Authors :
Mickevi?ius، نويسنده , , J. and Tamulaitis، نويسنده , , G and Vitta، نويسنده , , P. and Zukauskas، نويسنده , , A. and Starzhinskiy، نويسنده , , N. and Ryzhikov، نويسنده , , V.، نويسنده ,
Abstract :
Dynamics of photoluminescence (PL) decay in Te-doped ZnSe scintillator crystal is studied using frequency domain luminescence lifetime measurement technique, which enables simultaneous characterization of components in multicomponent PL decay in a wide time window ranging from millisecond to nanosecond domain. Evolution of decay times and relative contributions of the decay components corresponding to different PL decay mechanisms was revealed as a function of temperature.
