Author/Authors :
Singh، نويسنده , , B.K. and Triloki and Garg، نويسنده , , P. and Prakash، نويسنده , , A. and Di Santo، نويسنده , , G. and Nappi، نويسنده , , E. and Nitti، نويسنده , , M.A. and Valentini، نويسنده , , A. and Zanoni، نويسنده , , R.، نويسنده ,
Abstract :
CsI thin film photocathodes of 600 nm thickness deposited on polished Al surfaces by resistive evaporation technique were studied by angle-resolved X-ray photoelectron spectroscopy (ARXPS), before and after UV-irradiation under vacuum. It is shown that the “UV-irradiated” sample keeps the stoichiometric ratio Cs:I unchanged (1:1) while it shows a higher concentration of carbon in comparison with “as-deposited” samples. The morphology of the “as-deposited” sample is strongly affected after VUV-irradiation. The consequence of such effects on the physical and chemical properties of the “as-deposited” and “UV-irradiated” CsI thin film photocathodes is discussed.
Keywords :
Photon ageing , Photodetectors , XRD , XPS , SEM , CsI photocathodes
