Effects of deposition temperatures on structure and physical properties of Cd1−xZnxTe films prepared by RF magnetron sputtering

Cd1−xZnxTe films were deposited by RF magnetron sputtering from Cd0.9Zn0.1Te crystals target at different substrate temperatures (100–400 °C). The effects of the deposition temperature on structure and physical properties of Cd1−xZnxTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744–835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×108, 3.0×108, 1.9×108 and 1.1×108 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.