Author/Authors :
Jiang، نويسنده , , Bocheng and Xia، نويسنده , , Guoxing and Han، نويسنده , , Lifeng and Liu، نويسنده , , Guimin and Dai، نويسنده , , Zhimin and Zhao، نويسنده , , Zhentang، نويسنده ,
Abstract :
The Shanghai Synchrotron Radiation Facility (SSRF) is a new third generation storage ring based light source located at Zhangjiang High-Tech Park Shanghai China. The storage ring started commissioning in December 2007. During early commissioning, the fast ion instability (FII) was observed when multi-bunches were injected, which was strongly dependent on the vacuum pressure and filling patterns. In this paper, a weak–strong simulation code is employed to simulate the FII in the SSRF storage ring for various filling patterns and gas pressures. In addition, experimental study on cures of the FII has also been carried out. The results show that introducing gaps in between the bunch trains and increasing the ring chromaticity are very effective to suppress the growth of the FII.
Keywords :
FII , SSRF , Simulation , Filling pattern , Chromaticity