Author/Authors :
Berar، نويسنده , , J.-F. and Boudet، نويسنده , , N. and Breugnon، نويسنده , , P. and Caillot، نويسنده , , B. and Chantepie، نويسنده , , B. and Clemens، نويسنده , , J.-C. and Delpierre، نويسنده , , P. and Dinkespiller، نويسنده , , B. and Godiot، نويسنده , , S. and Meessen، نويسنده , , Ch. and Menouni، نويسنده , , M. and Morel، نويسنده , , C. and Pangaud، نويسنده , , P. and Vigeolas، نويسنده , , E. and Hustache، نويسنده , , S. and Medjoubi، نويسنده , , K.، نويسنده ,
Abstract :
Using Si sensors, the XPAD3 chip can be used from 4 up to 25 keV. The CdTe detector was designed to improve efficiency at higher energies (60 keV), but it still works at low energy: data were collected at 8 keV. Firstly, small detector prototypes were built and used for scattering experiments at BM02/ESRF and DIFABS/SOLEIL. Comparisons were made by collecting small angle X-ray scattering data using the same settings with the XPAD3 and the beam line CCD camera, as well as diffuse scattering from a quasi-crystal. Finally, a surface diffraction experiment was performed to characterize the strain in a few layers of GaInAs epitaxially grown on a GaAs single crystal.
Keywords :
pixel , Synchrotron , small angle X-ray scattering , X-ray diffraction , detector
