Title of article
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
Author/Authors
Luukka، نويسنده , , P. and Hنrkِnen، نويسنده , , Samuel J. and Tuovinen، نويسنده , , E. and Tuominen، نويسنده , , E. and Lassila-Perini، نويسنده , , K. and Mehtنlن، نويسنده , , P. and Nummela، نويسنده , , S. and Nysten، نويسنده , , J. and Ungaro، نويسنده , , D. and Zibellini، نويسنده , , A. and Laitinen، نويسنده , , P. and Riihimنki، نويسنده , , I. and Virtanen، نويسنده , , A. and Furgeri، نويسنده , , A. and Hartmann، نويسنده , , F.، نويسنده ,
Pages
5
From page
117
To page
121
Abstract
We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
Keywords
Si particle detectors , Material engineering , Radiation hardness
Journal title
Astroparticle Physics
Record number
2024278
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