Title of article
GaAs detector material made from 3-inch wafers
Author/Authors
Inbal Ayzenshtat، نويسنده , , G.I and Budnitsky، نويسنده , , D.L and Koretskaya، نويسنده , , O.B and Novikov، نويسنده , , V.A. and Mokeev، نويسنده , , D.Y. and Okaevich، نويسنده , , L.S. and Tolbanov، نويسنده , , O.P. and Tyazhev، نويسنده , , A.V.، نويسنده ,
Pages
4
From page
121
To page
124
Abstract
We present first results obtained with pad detectors processed from 3 inch diameter GaAs wafers compensated with Cr. The detector characteristics are analyzed from the point of view of uniformity across the wafer.
Keywords
GaAS , Ionizing radiation detector , Charge collection efficiency
Journal title
Astroparticle Physics
Record number
2024381
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