Processing and characterization of a position sensitive lateral-effect metal oxide semiconductor detector

Position sensing detectors (PSDs) are useful in many applications, such as vibration, displacement, and triangulation measurements. In this paper we present a lateral-effect metal oxide semiconductor PSD with switching capability fabricated by our group. The detector can be switched off by the application of 0 V on the substrate and 0.2 V on the gate. A linear current-position behaviour is exhibited by the detector at a substrate bias of both 5 and 10 V with the gate at 0 V. There is no effect on the linearity when the substrate voltage is changed from 5 to 10 V. The non-linearity is within 0.2% at a distance of ±1.5 mm from origin for 5, 10 and 15 mm device length.