Author/Authors :
Battaglia، نويسنده , , Marco and Contarato، نويسنده , , Devis and Denes، نويسنده , , Peter H. Doering، نويسنده , , Dionisio and Radmilovic، نويسنده , , Velimir، نويسنده ,
Abstract :
This letter presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 and 100 keV electrons. The point spread function is measured to be ( 13.0 ± 1.7 ) μ m at 100 keV and ( 12.1 ± 1.6 ) μ m at 80 keV, for 20 μ m pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.
