Author/Authors :
Piemonte، نويسنده , , C. and Batignani، نويسنده , , G. and Bettarini، نويسنده , , S. and Bondioli، نويسنده , , M. and Boscardin، نويسنده , , M. and Bosisio، نويسنده , , L. and Dalla Betta، نويسنده , , G.-F. and Dittongo، نويسنده , , S. and Forti، نويسنده , , F. and Giorgi، نويسنده , , M. and Gregori، نويسنده , , P. and Rachevskaia، نويسنده , , I. and Ronchin، نويسنده , , S. and Zorzi، نويسنده , , N.، نويسنده ,
Abstract :
We report on the static and dynamic behavior of BJT-based particle detectors realized on high-resistivity silicon. Several prototypes, featuring different doping profiles and geometries, have been fabricated at ITC-irst (Trento, Italy). These devices have been thoroughly characterized from the electrical viewpoint, and, in order to understand the fundamental parameters of the structure, device simulations have been performed, whose results are in very good agreement with experimental data. Preliminary functional measurements have been carried out by using a 109 Cd source excitation.
