Author/Authors :
Cindro، نويسنده , , Vladimir and Kramberger، نويسنده , , Gregor and Lozano، نويسنده , , Manuel and Mandi?، نويسنده , , Igor and Miku?، نويسنده , , Marko and Pellegrini، نويسنده , , Giulio and Pulko، نويسنده , , Jo?ef and Ullan، نويسنده , , Miguel and Zavrtanik، نويسنده , , Marko، نويسنده ,
Abstract :
Diodes fabricated on high resistivity standard, oxygenated and magnetic Czochralski p-type materials were irradiated with reactor neutrons and 24 GeV/c protons up to an equivalent fluence of Φeq=3×1014 cm−2. Radiation effects on effective trapping times, effective dopant concentration and leakage current were measured at 20 °C. Annealing of defects was performed at 20 and 60 °C.
